With the year soon coming to its end, the International Electron Devices Meeting (IEDM), an annual meeting held by IEEE, is set to happen this December in San Fransisco, USA. Along with this, some groups are expected to report on their exciting work including Micron, TSMC, Intel and a group of researchers from ETH Zurich and the University of Bordeaux.
Intel and TSMC are going to report on the Complementary FET (CFET) that was mentioned by imec on their roadmap in 2018.
Micron is reporting on a new DRAM structure they have worked on called the NVDRAM (Non-Volatile DRAM), which is essentially a non-volatile memory with DRAM-like performance through the use of ferroelectric material.
Lastly, the group from ETH Zurich and the University of Bordeaux are going to report on a high frequency device capable of operating in the terahertz range, based on compound semiconductors.
For a more detailed list on other research works that are going to be presented at IEDM, you can go to this page IEDM Press Kit — IEDM.